In this article a two stage GaN-HEMT power amplifier for satellite communication applications is presented. The proposed amplifier has operating frequency range of 12-18 GHz, output power of 40dBm, gain of 10dBm and, power added efficiency (PAE) of 10%.The proposed amplifier consists of gain amplifier in stage I and power amplifier in stage II which provides aforementioned characteristics. The simulation of the proposed power amplifier is carried out using ADS commercial simulation software. The proposed power amplifier is suitable for satellite communication.
Keywords: GaN-HEMT technology, power amplifier, ADS, gain, output power, input power.
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